| 摘要 |
<p>A reflective type EUV(Extreme Ultra-Violet) blank mask and a photo mask and a manufacturing method thereof are provided to reduce defects of patterns by reducing defects thereof in exposure and developing processes. A plurality of reflective layers(2) are alternately stacked on a transparent layer(1). The reflective layers are formed with two or more kinds of layers. A capping layer(3) is formed on an upper surface of the reflective layer. A buffer layer(4) is formed on an upper surface of the capping layer. An absorption layer(5) is formed on an upper surface of the buffer layer. A hard mask layer(6) is formed on an upper surface of the absorption layer. The hard mask layer is formed with layers having two different levels of reflectance in one of inspection waves of 193 nm, 248 nm, 257 nm, 365 nm, and 488 nm, or is formed with stack structure of continuous layers having continuous changes.</p> |
