发明名称 HIGH DENSITY NANOSTRUCTURED INTERCONNECTION
摘要 A method and apparatus for forming an electrically and/or thermally conducting interconnection is disclosed wherein a first surface and a second surface are contacted with each other via a plurality of nanostructures disposed on at least one of the surfaces. In one embodiment, a first plurality of areas of nanostructures is disposed on a component in an electronics package such as, illustratively, a microprocessor. The first plurality of areas is then brought into contact with a corresponding second plurality of areas of nanostructures on a substrate, thus creating a strong friction bond. In another illustrative embodiment, a plurality of nanostructures is disposed on a component, such as a microprocessor, which is then brought into contact with a substrate. Intermolecular forces result in an attraction between the molecules of the nanostructures and the molecules of the substrate, thus creating a bond between the nanostructures and the substrate.
申请公布号 US2008001306(A1) 申请公布日期 2008.01.03
申请号 US20070852413 申请日期 2007.09.10
申请人 LUCENT TECHNOLOGIES INC. 发明人 BASAVANHALLY NAGESH R.;CIRELLI RAYMOND A.;LOPEZ OMAR D.
分类号 B82B1/00;H01L23/48;B81B7/00;B82B3/00;H01L21/60;H01L21/768;H01L23/373;H01L23/485;H01L23/49 主分类号 B82B1/00
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