| 摘要 |
<p>A thin film transistor array substrate and a manufacturing method thereof are provided to form a high-capacity storage capacitor by using only a passivation as an insulation layer of the capacitor. A substrate(100) having a first region is prepared, and then a gate electrode(G) and a common wiring are formed on the substrate. A gate insulation layer(53) is formed on the entire surface of the substrate, and then is patterned to form a common wiring contact hole exposing the common wiring. A semiconductor layer(54) is formed on the gate insulation layer, and then source/drain electrodes(S,D) are formed on the semiconductor layer while forming a dummy metal layer. A passivation(57) is formed on the entire surface comprising the source/drain electrodes, and then is patterned to form a pixel electrode contact hole. A pixel electrode(59a) is formed to be connected to the drain electrode via the pixel electrode contact hole.</p> |
