| 摘要 |
A semiconductor device and a method for manufacturing the same are provided to increase an alignment margin between a storage node contact and a landing plug by forming a landing plug contact with an embossed structure. An interlayer dielectric forming process is performed to form an interlayer dielectric on a substrate(10). The interlayer dielectric includes a plurality of contact holes. A contact plug forming process is performed to form a plurality of contact plugs to bury the contact holes. The contact plugs are partially protruded from upper parts of contact holes to be extended to adjacent contact plugs. The contact plugs are extended as much as 5-30 nm toward the adjacent contact plugs.
|
