| 摘要 |
An image sensor having a partially full depletion floating diffusion node is provided to reduce an area of a floating diffusion node in a sharing pixel structure by storing electric charges only in a neutral region. A photodiode(21) includes a first conductive type first diffusion region and a second conductive type second diffusion region. A floating diffusion node(23) includes a first conductive type third diffusion region, a second conductive type fourth diffusion region formed on a top of the first conductive type third diffusion region, and a fifth diffusion region. The second conductive type fourth diffusion region is a full depletion region. The fifth diffusion region is a partially full depletion region. A transmission unit transmits optical charges stored in the photodiode to the floating diffusion region in response to a transmission signal.
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