发明名称 III-V group nitride system semiconductor substrate
摘要 A III-V group nitride system semiconductor substrate is of a III-V group nitride system single crystal. The III-V group nitride system semiconductor substrate has a flat surface, and a vector made by projecting on a surface of the substrate a normal vector of a low index surface closest to the substrate surface at an arbitrary point in a plane of the substrate is converged on a specific point or a specific region inside or outside the plane of the substrate.
申请公布号 US2008001174(A1) 申请公布日期 2008.01.03
申请号 US20070892382 申请日期 2007.08.22
申请人 HITACHI CABLE, LTD. 发明人 SHIBATA MASATOMO
分类号 H01L29/12;C30B25/18;C30B29/40;H01L21/20;H01L29/04;H01L29/20;H01L33/00;H01S5/02;H01S5/323 主分类号 H01L29/12
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