| 摘要 |
A method for forming a gate of a semiconductor device includes providing a polysilicon layer over a semiconductor substrate, the polysilicon having dopants. A conductive layer is formed over the polysilicon layer. The conductive layer and the polysilicon layer are etched to form a gate structure, the gate structure having a sidewall that is damaged by the etching. The sidewall of the gate structure is nitridated to compensate for the damage to the sidewall of the gate structure.
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