| 摘要 |
An MOS transistor for a semiconductor device is provided to increase an amount of electric current flowing a channel even at the same area by forming a gate pattern in a cross layout. An MOS transistor includes a first source region(S1), a second source region(S2), and a drain region(D) spaced apart from the first and second source regions at a predetermined interval. A gate pattern is formed to cover a region between the first source region and the drain region and a region between the second source region and the drain region. A first contact(22) is in contact with the first source region, and a first wiring(21) is in contact with the first contact. A second contact(23) is in contact with the second source region, and a second wiring(27) is in contact with the second contact. Third and fourth contacts which are in contact with the first and second wirings are commonly connected to the third and fourth contacts via a third wiring(24).
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