| 摘要 |
A semiconductor memory device is provided to supply an internal voltage efficiently in a burn-in mode and a normal mode, by using one sensing circuit. A burn-in adjustment circuit(100) generates a burn-in mode test signal. A first reference voltage generation circuit(200) generates a first reference voltage for a burn-in test in response to the burn-in mode signal. A second reference voltage generation circuit(300) generates a first reference voltage used in a normal mode operation. A sensing circuit(400) senses the voltage level of the first reference voltage or the second reference voltage. An internal voltage generation circuit(500) generates an internal voltage in correspondence to the sensing result of the sensing circuit.
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