METHOD OF FORMING GATE PATTERN OF SEMICONDUCTOR DEVICE

摘要

A method of forming a gate pattern in a semiconductor device is provided to suppress oxygen from being captured in a tunnel oxide layer by not using hydrogen gas in a process of raising or lowering a temperature of a substrate. A gate insulating layer(110) is formed on a substrate(100), and then a gate structure(120) having a metal layer pattern is formed on the gate insulating layer. The substrate comprising the gate structure is heated by a process temperature under a vacuum atmosphere or a first gas atmosphere containing nitrogen. The substrate comprising the gate structure is subjected to a selective oxidization process at the process temperature. The substrate comprising the gate structure is cooled under a vacuum atmosphere or a second gas atmosphere comprising nitrogen.