| 摘要 |
Disclosed herein is a non-volatile memory, including: a memory cell array to be accessed with data including a data portion and a specific field as a unit of access; a buffer configured to hold the access-unit data read from the memory cell array or the access-unit data to be written to the memory cell array; and a control circuit configured to control access to the memory cell array in accordance with a specified address, a command, and data in the specific field of the access-unit data held in the buffer. |
