CAPACITOR AND METHOD FOR MANUFACTURING THEREOF

摘要

A capacitor and a manufacturing method thereof are provided to achieve an equivalent oxide layer of 6 Angstrom or less by using a dielectric layer of a triple-layered structure. A bottom electrode(31) is formed by using any one of sputtering, chemical vapor deposition and atomic layer deposition, and then a niobium oxide layer(32) is formed on the bottom electrode to have a thickness of 30 to 150 Angstrom. The niobium oxide layer is subjected to heat treatment to crystallize the niobium oxide layer, thereby forming a crystalline niobium oxide layer(32A). A tantalum oxide layer(33) is formed on the crystalline niobium oxide layer, and then an amorphous niobium oxide layer is formed on the amorphous tantalum oxide layer. The amorphous tantalum oxide layer is crystallized to form a crystalline niobium oxide layer.