| 摘要 |
A substrate processing method is provided to remove residue caused by hydrofluoric acid by reacting NH3 gas with a residual material and sublimating the reacted residual material. HF(hydrofluoric acid) gas is supplied toward a substrate having a first oxide layer and a second oxide layer with impurities that are formed by a thermal oxide treatment. Cleaning gas including at least NH3 gas is supplied toward the substrate. The substrate is formed on the first oxide layer and has a silicon containing layer covered with the second oxide layer. The second oxide layer partially exposes the silicon containing layer. The silicon containing layer is etched before the HF gas is supplied.
|
