发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A semiconductor memory device is disclosed in which a layer containing an organic compound is interposed between a pair of electrodes and, further, a first layer including a first metal oxide and a second layer including a second metal oxide are interposed between the pair of electrodes. One of the two layers including the metal oxide acts as a p-type semiconductor layer and the other acts as an n-type semiconductor layer. The first layer including the first metal oxide and the second layer including the second metal oxide form a p-n junction, which provides rectification characteristic to the semiconductor memory device.
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申请公布号 |
US2008001143(A1) |
申请公布日期 |
2008.01.03 |
申请号 |
US20070808498 |
申请日期 |
2007.06.11 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
NOMURA RYOJI;TOKUNAGA HAJIME;KATO KIYOSHI |
分类号 |
H01L29/08;H01L51/40 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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