| 摘要 |
A method of forming a fuse box in a semiconductor device is provided to prevent fail of the fuse box due to a repair logic error by preventing attack of a fuse when a first metal contact is formed. First and second interlayer dielectrics(106,110) are formed on a substrate(100), and then a plate layer(114) is formed on the second interlayer dielectric. A third interlayer dielectric(112) is formed to cover the plate layer. A stopper material is deposited on the third interlayer dielectric, and then is etched so that the stopper material having a predetermined width remains. A predetermined region is selectively etched to form a metal contact region. A barrier metal layer(122) is formed on the entire surface, and then a first metallization contact plug layer(124) is formed to bury the metal contact region. The first metallization contact plug layer is etched to form a first metallization(126).
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