GAN-BASED COMPOUND SEMICONDUCTOR AND THE FABRICATION METHOD THEREOF

摘要

A GaN-based compound semiconductor and a manufacturing method thereof are provided to decrease a contact resistance by decreasing a tunneling barrier width and enhancing a tunneling transport phenomenon. A GaN-based compound semiconductor includes a substrate(100), a buffer layer(200), an n-type GaN layer(400), an activation layer(500), a p-type GaN layer(600), and an indium rich InGaN contact layer(700). The buffer layer is formed on the substrate. The n-type GaN layer is formed on the buffer layer. The activation layer is formed on the n-type GaN layer. The p-type GaN layer is formed on the activation layer. The indium rich InGaN contact layer is formed on the p-type GaN layer.