| 摘要 |
An OPC(Optical Proximity Correction) mask pattern is provided to compensate easily a line end part by maximizing an OPC effect with respect to a mask pattern. A lower mask pattern is formed at a layout for photolithography process. End parts(30) of the lower mask patterns include a plurality of fine patterns in order to prevent an overlapped part between the end parts of the lower mask patterns. The fine patterns are formed with rectangular patterns. The fine patterns are arranged in a stepped structure having a stepped part. The fine patterns are arranged in a constant interval from each other. The OPC mask pattern is formed by using one of cyclic olefin, cyclic acetylene, a polymer of a cyclic acetylene inducer, a polymer compound of a norbornene monomer, and an aliphatic cyclic polymer. |
