| 摘要 |
<p>A method for forming a fine pattern in a semiconductor device is provided to obtain the fine pattern by adjusting a pattern width of an exposure mask and exposure energy. A pattern forming layer(102) and a photoresist layer(103) are formed on a top surface of a semiconductor substrate(101). A photoresist layer exposure process is performed by using a light source of an exposure system through an exposure mask(104). The number of exposure parts is larger than the number of exposure masks. A photoresist layer pattern is formed by removing the exposure parts formed on the photoresist layer. A pattern having a pitch smaller than a pitch of the exposure mask is formed by removing the exposed pattern forming layer by using the photoresist layer pattern as a mask.</p> |
