| 摘要 |
<p>A semiconductor device and its manufacturing method are provided to prevent a data loss by preventing charges from migrating between adjacent floating gate layers. A semiconductor device includes a semiconductor substrate, a first gate insulation film, a first gate electrode layer, a device isolation film(6), a second gate insulation film(7), and a second gate electrode layer. The first gate insulation film is formed on the semiconductor substrate. The first gate electrode layer is formed on the first gate insulation film. The device isolation film is formed to separate first gate electrode layers from one another. The second gate insulation film is formed to cover the first gate electrode layer and the device isolation film. The second gate electrode layer is formed on the second gate insulation film. The second gate insulation film includes an NONON stack structure. A lowermost nitride film, which is contacted with the first gate electrode layer, is cut between the first gate electrode layers.</p> |
