发明名称 Liquid crystal display device with variations of positions of peaks of depth distributions of concentration of impurities in polycrystalline being within 10% of thickness
摘要 A liquid crystal display device is provided with a pixel area on a substrate having plural gate lines, plural drain lines, plural thin film transistors and plural pixel electrodes corresponding to the plural thin film transistors, and a drive circuit area disposed at a periphery of the substrate and having a drive circuit for driving the plural thin film transistors. The thin film transistor has a polycrystalline silicon semiconductor layer formed on the substrate, a gate electrode formed on the polycrystalline silicon semiconductor layer with a gate insulating film interposed therebetween, an insulating film to cover the polycrystalline silicon semiconductor layer, the gate insulating film and the gate electrode, a drain electrode formed on the insulating film and electrically connected to the polycrystalline silicon semiconductor layer, and a source electrode formed on the insulating film, spaced from the drain electrode and electrically connected to the polycrystalline silicon semiconductor layer. The unevenness of a surface of the polycrystalline silicon semiconductor layer is within 10% of a thickness of the polycrystalline silicon semiconductor layer.
申请公布号 US7315335(B2) 申请公布日期 2008.01.01
申请号 US20030642654 申请日期 2003.08.19
申请人 HITACHI, LTD. 发明人 MIYAZAWA TOSHIO;MIMURA AKIO
分类号 G02F1/136;G09F9/30;G02F1/1368;H01L21/20;H01L21/336;H01L29/786 主分类号 G02F1/136
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