| 摘要 |
<p>The invention relates to a method for producing a semiconductor wafer with a profiled edge, comprising the following steps: the separation of the semiconductor wafer from a crystal; an edge profile producing step, in which the edge is mechanically machined and acquires a profile that is true to scale with respect to a target profile; a mechanical machining step, in which a thickness of the semiconductor wafer is reduced; and an edge profile machining step, in which the edge is mechanically machined and acquires the target profile.</p> |
