| 摘要 |
A method for manufacturing a CMOS image sensor is provided to remove effectively an F component by performing additionally an F composition removal process. An interlayer dielectric(120) is formed on a substrate(110) including a unit pixel region and a pad region. A pad(130) and a pad protection layer are sequentially formed by etching the interlayer dielectric of the pad region. A color filter layer and a planarization layer are sequentially formed on the interlayer dielectric of the unit pixel region. A micro-lens(160) is formed on the planarization layer. The pad protection layer is removed to open the pad of the substrate including the micro-lens. In the process for removing the pad protection layer, an F-containing compound(150) generated from the pad is removed by using a plasma gas as a mixed gas of an Ar gas and an H2 gas at the temperature of 200 degrees centigrade and below, in chamber for removing the pad protection layer. A package process is performed by using the pad.
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