发明名称 METHOD OF CONTROLLING TEMPERATURE OF SEMICONDUCTOR WAFER
摘要 <p>A method for adjusting the temperature of a semiconductor wafer is provided to improve temperature nonuniformity caused by evaporation of liquid by having an atmosphere of an immersion lithography process in which fluid for immersion lithography maintains a saturated vapor state. An immersion lithography process is used to fabricate a semiconductor device. The atmosphere of the immersion lithography process maintains a saturated vapor state of the fluid(30) for immersion lithography. The fluid for immersion lithography can be ultra pure water. The saturated vapor(200) of the fluid for immersion lithography can have a temperature of 22-23 °C.</p>
申请公布号 KR20070121955(A) 申请公布日期 2007.12.28
申请号 KR20060056812 申请日期 2006.06.23
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, JUN TAEK
分类号 H01L21/027 主分类号 H01L21/027
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