| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which can manufacture stably even when the miniaturization of element patterns advances without producing breakdown voltage deterioration, in the semiconductor device where a high breakdown voltage transistor and a low voltage drive transistor are formed in the same semiconductor substrate. SOLUTION: On a semiconductor substrate 1, a conductive film 5 and an insulating film 6 are sequentially formed through gate oxide films 3, 4. The insulating film 6 and the conductive film 5 are sequentially etched as a resist pattern 7 as a mask, a patterned insulating film 8 and the laminate of a gate electrode 9 of the high breakdown voltage transistor are formed. An impurity is injected as inversely conductive to the semiconductor substrate 1 with the laminate as a mask. COPYRIGHT: (C)2008,JPO&INPIT
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