| 摘要 |
A semiconductor device fabrication method includes forming an insulating film having an opening on the major surface of single-crystal silicon, and forming an amorphous silicon film on the surface of the single-crystal silicon exposed in the opening and on the surface of the insulating film. The semiconductor device fabrication method further includes performing annealing to change the amorphous silicon film into a single crystal, and forming a single-crystal silicon film, SiGe film, or carbon-containing silicon film by vapor phase growth on a region where the amorphous silicon film is changed into a single crystal.
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