发明名称 |
Halbleiterssonde mit Widerstandsspitze und deren Herstellungsverfahren |
摘要 |
<p>Provided are a semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist on the substrate to cover a portion of the first photoresist and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresists; and removing the first and second photoresists, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.</p> |
申请公布号 |
DE602005003279(D1) |
申请公布日期 |
2007.12.27 |
申请号 |
DE20056003279T |
申请日期 |
2005.09.02 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
PARK, HONG-SIK;BAECK, KYOUNG-LOCK;JUNG, JU-HWAN;KO, HYOUNG-SOO;PARK, CHUL-MIN;HONG, SEUNG-BUM |
分类号 |
G01Q60/00;G01Q80/00;G01R1/067;G11B9/00 |
主分类号 |
G01Q60/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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