FIELD EFFECT TRANSISTOR

摘要

A field effect transistor comprises a source electrode (105) connected to a part of at least one fine semiconductor (103) among a plurality of fine semiconductors, a drain electrode (106) connected to another part of the fine semiconductor (103), and a gate electrode (102) capable of controlling the electric conductivity of the fine semiconductor (103). The fine semiconductor (103) includes a low concentration region (108) having a relatively low doping concentration and a pair of high concentration regions (107) having a doping concentration higher than that of the low concentration region (108) and connected to both ends of the low concentration region (108). The high concentration region (107) is doped at a concentration of 1 OE10<SUP>19</SUP> cm<SUP>-3</SUP> or more. The low concentration region (108) has a length shorter than the length of the gate electrode (102) extending in the direction from the source electrode (105) to the drain electrode (106). The gate electrode (102) has a length shorter than the distance between the source electrode (105) and the drain electrode (106).