A method for forming a semiconductor device is provided to manufacture a metal silicide film with a uniform surface without having a void and a lump, by forming a metal prevention layer which is formed by PVD(Physical Vapor Deposition) or ALD(Automic Layer Deposition). An insulating layer(110) having an opening for exposing a substrate is formed on the semiconductor substrate. A metal prevention layer(120) is formed on the exposed substrate by performing PVD(Physical Vapor Deposition) or ALD(Automic Layer Deposition). A metal film(130) is formed on the metal prevention layer by performing CVD(Chemical Vapor Deposition). A metal silicide film(150) is formed by performing a reaction of the semiconductor substrate with the metal prevention layer and the metal film by performing an anneal process.
