发明名称 PMOS PIXEL STRUCTURE WITH LOW CROSS TALK
摘要 <p>An image sensor with an image area having a plurality of pixels each having a photodetector of a first conductivity type, the image sensor includes a substrate of the first conductivity type; a first layer of the second conductivity type between the substrate and the photodetectors, spanning the image area and biased at predetermined potential with respect to the substrate for driving excess carriers into the substrate to reduce cross talk; one or more adjacent active electronic components disposed in the first layer within each pixel; and electronic circuitry disposed in the substrate outside of the image area.</p>
申请公布号 WO2007149137(A1) 申请公布日期 2007.12.27
申请号 WO2007US07388 申请日期 2007.03.23
申请人 EASTMAN KODAK COMPANY;STEVENS, ERIC, GORDON;KOMORI, HIROFUMI 发明人 STEVENS, ERIC, GORDON;KOMORI, HIROFUMI
分类号 H01L27/146 主分类号 H01L27/146
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