| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology capable of restraining atoms contained in the described metal films (gate material) from being mutually diffused when a gate electrode is formed in both cases that a dual gate is formed of different metal silicides, and that a dual gate is formed of metal and metal alloy. <P>SOLUTION: Gate electrodes 6 and 7 formed of a polysilicon film is separated from each other through the intermediary of a side wall spacer 12S which fills up a gap 10 formed above an element isolation film 5S located at an interface between an NMIS region and a PMIS region, and is disposed in face to face with each other. A first metal film 14 is formed on the gate electrode 6, and a second metal film 16 different from the first metal film 14 is formed on the gate electrode 7. The gate electrodes 6 and 7 are turned to different metal silicide gates by promoting a silicide forming reaction through a thermal treatment. In this case, since the insulating film 12S is interposed, metal atoms are restrained from being mutually diffused into the gate electrodes 6 and 7 from the metal films 14 and 16, respectively. <P>COPYRIGHT: (C)2008,JPO&INPIT |
