THIN FILM TRANSISTORS WITH POLY(ARYLENE ETHER) POLYMERS AS GATE DIELECTRICS AND PASSIVATION LAYERS

摘要

The use of a poly(arylene ether) polymer as a passivation or gate dielectric layer in thin film transistors. This poly(arylene ether) polymer includes polymer repeat units of the following structure: -(O-Ar₁-O-Ar₂-O-)_m-(-O-Ar₃-O-Ar₄-O)_n- where Ar₁, Ar₂, Ar₃, and Ar₄ are identical or different aryl radicals, m is 0 to 1, n is 1-m, and at least one of the aryl radicals is grafted to the backbone of the polymer