| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics of an MOS transistor having a packet region by reducing fluctuation in concentration of pocket impurities, and to improve characteristics of the MOS transistor by applying a stress on the channel region of the MOS transistor to distort a crystal lattice. SOLUTION: The manufacturing method of a semiconductor device includes a process in which a gate insulating film is formed on a silicon substrate, a process in which an amorphous silicon layer is deposited on the gate insulating film, a process in which the amorphous silicon layer is processed into a gate electrode shape of the MOS transistor, and a process in which a pocket impurity is diagonally injected into the surface of silicon substrate with the amorphous silicon layer having been processed in a gate electrode shape as a mask. COPYRIGHT: (C)2008,JPO&INPIT
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