| 摘要 |
PROBLEM TO BE SOLVED: To reduce a leakage current during the off-state of a transistor without the deterioration of a current driving force. SOLUTION: A hetero semiconductor region 3 for hetero junction with an n-type drain region 2 formed on an n-type substrate region 1 is formed as a source region, a gate electrode 5 is formed via a gate insulating film 4 adjacent to the hetero junction between the drain region 2 and the hetero semiconductor region 3, and a driving point 9 of a field effect transistor is defined to a point where the gate insulating film 4, the hetero semiconductor region 3 and the drain region 2 are in contact with one another. In this field effect transistor, a p-type semiconductor region 10 is formed on the front surface of the drain region 2 around the periphery of the driving point 9 in contact with the driving point 9 of the transistor. COPYRIGHT: (C)2008,JPO&INPIT
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