| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which electrostatic breakdown of a switching transistor due to surge voltage can be prevented, an element with low breakdown strength can be used in an electrostatic breakdown device and switching of output current can be performed at high speed. <P>SOLUTION: When the surge voltage is applied to an output terminal 4 by connecting the electrostatic breakdown device 7 to the emitter of a transistor 5, electrostatic breakdown of the switching transistor 3 is prevented by absorbing surge electric charge by the electrostatic breakdown device composed of a MOS transistor 7. In addition, an element with breakdown strength lower than output terminal voltage can be used in the electrostatic breakdown device 7, and since an output terminal 4 is not affected by parasitic capacitance of the electrostatic breakdown device 7, switching is performed at high speed. <P>COPYRIGHT: (C)2008,JPO&INPIT |
