发明名称 |
MAGNETISCHE SPEICHERANORDNUNG BESCHREIBBAR DURCH SPIN-POLARISIERTEN STROM UNTER BENÜTZUNG VON AMORPHEN FERRIMAGNETISCHEN LEGIERUNGEN, UND SCHREIBVERFAHREN IN DIESER SPEICHERANORDNUNG |
摘要 |
The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction ( 60 ), comprising: a magnetic layer, called trapped layer ( 61 ), whereof the magnetization is rigid; a magnetic layer, called free layer ( 63 ), whereof the magnetization may be inverse; and insulating layer ( 62 ), interposed between the free layer ( 73 ) and the trapped layer ( 71 ) and respectively in contact with said two layers. The free layer ( 63 ) is made with an amorphous or nanocrytallized alloy based on rare earth or a transition metal, the magnetic order of said alloy being of the ferromagnetic type, said free layer having a substantially planar magnetization. |
申请公布号 |
DE60223573(D1) |
申请公布日期 |
2007.12.27 |
申请号 |
DE2002623573 |
申请日期 |
2002.09.19 |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S.) |
发明人 |
NOZIERES, JEAN-PIERRE;RANNO, LAURENT;CONRAUX, YANN |
分类号 |
G11C11/15;G11C11/16;H01F10/12;H01F10/32;H01L21/8246;H01L27/105;H01L43/08 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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