| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a wiggle-shaped pattern of a semiconductor device not by lithography. SOLUTION: The method of forming a pattern of a semiconductor device comprises steps of depositing a processing film on a semiconductor substrate, depositing a mask film having a varying etching characteristic on the processing film by doping an impurity in the processing film, forming a line pattern on the mask film, selectively doping an impurity in a desired region of the mask film having the line pattern formed thereon to provide a varying etching rate, forming a mask pattern having partially different line widths and including a wiggle shape by selectively etching the line pattern of the mask film, and forming a wiggle shaped pattern by etching the processing film with the mask pattern used as a mask. COPYRIGHT: (C)2008,JPO&INPIT
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