发明名称 Goldverbindungsdraht für ein Halbleiterbauelement
摘要 A gold wire for semiconductor element bonding, which comprises 11-20 ppm by mass of Ag, 1-9 ppm by mass of Pt, 1-15 ppm by mass of Y, 1-15 ppm by mass of La, and 1-15 ppm by mass of Eu, with either or both 1-20 ppm by mass of Ca and 1-10 ppm by mass of Be, the total amount of the above elements being not more than 100 ppm by mass, the remainder being Au and unavoidable impurities.
申请公布号 DE60127768(T2) 申请公布日期 2007.12.27
申请号 DE2001627768T 申请日期 2001.02.27
申请人 TANAKA DENSHI KOGYO K.K. 发明人 ICHIMITSU, ITABASHI;SHIN, TAKAURA
分类号 C22C5/02;H01L23/49;H01L21/60 主分类号 C22C5/02
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