| 摘要 |
A sputtering target comprising Ta or a Ta alloy, characterized in that the {110} plane X-ray diffraction intensity ratio is not more than 0.4, even not more than 0.2. A sputtering target comprising Ta or a Ta alloy, characterized in that the {110} plane X-ray diffraction intensity ratio in the target surface is not more than 0.8 and the {110} plane X-ray diffraction intensity ratio in a depth of 100 V or more is not more than 0.4. These Ta or Ta alloy targets can minimize a variation in film formation rate for each target during the life of sputtering targets, and thus can improve and stabilize the production efficiency of semiconductors in the sputtering process and can contribute to a reduction in production cost.
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