| 摘要 |
An organic light emitting display and a manufacturing method thereof are provided to improve a characteristic distribution between devices by forming an active layer with polycrystalline silicon in an optimum position. An organic light emitting display(200) includes a substrate(210), a buffer layer(220), an align mark(230), an active layer(240), a gate insulation film(250), a gate electrode(260), an interlayer insulation film(270), a source/drain electrode(280), an insulation film(290), and an organic light emitting device(300). The substrate has a display area(211) and a non-display area(212). The buffer layer is formed on the whole substrate, and has a catalyst metal. The align mark is formed on the buffer layer corresponding to the non-display area. The active layer is formed on the buffer layer corresponding to the display area with an SGS(Super Grained Silicon) crystallization method. The gate insulation film is formed on the align mark and the active layer. The gate electrode is formed on the gate insulation film corresponding to the active layer. The interlayer insulation film is formed on the gate electrode. The source/drain electrode is formed on the interlayer insulation film, and is electrically connected to the active layer. The insulation film is formed on the source/drain electrode. The organic light emitting device is formed on the insulation film, and is electrically connected to the source/drain electrode. |
