| 发明名称 |
Semiconductor thin film forming system |
| 摘要 |
In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt 20 ') for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cm<SUP>-2 </SUP>and can provide a silicon-insulating film interface exhibiting a low interface state density. |
| 申请公布号 |
US7312418(B2) |
申请公布日期 |
2007.12.25 |
| 申请号 |
US20040021306 |
申请日期 |
2004.12.23 |
| 申请人 |
NEC CORPORATION;SUMITOMO HEAVY INDUSTRIES;ANELVA CORPORATION |
发明人 |
TANABE HIROSHI;AKASHI TOMOYUKI;WATABE YOSHIMI |
| 分类号 |
H01L21/205;H01L21/268;B23K26/06;B23K26/067;B23K26/073;C23C14/28;H01L21/027;H01L21/20;H01L21/336;H01L29/786;H01S3/00 |
主分类号 |
H01L21/205 |
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