METAL-ORGANIC VAPORIZING AND FEEDING APPARATUS, METAL-ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS, METAL-ORGANIC CHEMICAL VAPOR DEPOSITION METHOD, GAS FLOW RATE REGULATOR, SEMICONDUCTOR MANUFACTURING APPARATUS, AND SEMICONDUCTOR MANUFACTURING METHOD

摘要

A metal organic vaporizing and supplying apparatus is provided to eliminate the necessity of a mass flow controller for controlling the flow rate of diluent gas by adjusting the gas pressure of a metal organic gas supply path substantially by a pressure adjusting part. A metal organic material(13) is stored in a receptacle(1). A bubbling gas supply path(3) supplies bubbling gas to the organic metal material, connected to the receptacle. A metal organic gas supply path(5) supplies metal organic gas generated from the receptacle and diluent gas for diluting the metal organic gas to a film forming chamber, connected to the receptacle. A diluent gas supply path(7) supplies the diluent gas to the metal organic gas supply path, connected to the metal organic gas supply path. A mass flow control part(9) controls the flow rate of the bubbling gas, installed in the bubbling gas supply path. A pressure control part(11) controls the pressure of the diluent gas. A throttle part(S) is installed in the metal organic gas supply path, positioned more downstream than a connection position(A) of the metal organic gas supply path and the diluent gas supply path. The throttle part can adjust the flow rate of passing gas by the pressure of upstream gas. A diluent gas flow rate measuring part measures the flow rate of the diluent gas, installed in the diluent gas supply path.