| 摘要 |
A semiconductor device producing method is provided to suppress generation of a divot and to improve reliability of a semiconductor device by forming a semiconductor isolation layer. A pad oxide layer and a nitride layer are deposited on a semiconductor substrate(21). A shallow trench having a predetermined depth is formed on the semiconductor substrate by performing a photolithography process and an etch process. An oxide is deposited in the trench. A planarization process is performed by using a chemical and mechanical method. A densifying process is performed to increase density of an upper surface of the semiconductor substrate. A dry-etch process is performed on the upper surface of the semiconductor substrate for 6-8 seconds under conditions of 27MHz RF power of 380-420W, 2MHz RF power of 280-420W, pressure of 140-160Torr, Ar of 180-220 sccm, CF4 of 45-55sccm, CHF3 of 9-11 sccm, and O2 of 8-10sccm.
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