| 摘要 |
An IGBT stack device for a large capacity power inverter is provided to make the large capacity power inverter stably by supplying the same current to plural IGBTs which are parallel-connected to each other. An IGBT(Insulated Gate Bipolar Transistor) stack device for a large capacity power inverter includes 12 stacks(100), a reactor, a parallel coupling bus bar, first and second vertical connecting bus bars, a DC input bus bar, and an AC output bus bar. Four stacks are parallel-connected with each other in three phases respectively. The stack includes a base substrate(110), a heat radiator(120), an inverter, and a cooling unit(140). The heat radiator is arranged on the base substrate and radiates heat to the outside during an operation of the stack. The inverter smoothes an input AC voltage to generate a DC voltage and converts the DC voltage to an AC voltage to output a power consumption. The cooling unit cools down a switching element.
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