| 摘要 |
A dry etching apparatus for manufacturing a semiconductor is provided to etch stably a wafer and to prevent a wafer dropping effect by inducing plasma ions to an upper surface of the wafer. A chuck is installed in an inside of a process chamber. A wafer(2) is loaded on the chuck. A radio frequency power generator(4) and a power supply unit(6) are installed at the process chamber in order to perform a wafer etching process. An aluminum oxide layer(100) is formed on an upper surface of the wafer in order to improve linear characteristics of plasma ions generated by the radio frequency power generator, and to prevent damage caused by generation of plasma sparks. The aluminum oxide layer includes a plurality of ion penetration parts which are erected to a vertical direction.
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