| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which conductive materials are stably positioned on a silicon substrate. <P>SOLUTION: A semiconductor device comprises: a first conductive region 81 of a second conductivity type that is provided from the front surface to the rear surface of a semiconductor substrate of a first conductivity type; a second conductive region 2 of the second conductivity type that is formed in the front surface of the semiconductor substrate so as to be positioned on one side across the first conductive region; a third conductive region 3 of the second conductivity type that is formed in the rear surface of the semiconductor substrate so as to be positioned on the other side across the first conductive region; a third conductive material 22 that connects an electrode terminal on the exposed surface of the third conductive region; a second conductive material 21 that is formed on the rear surface of the semiconductor substrate so as to connect an electrode terminal on an exposed surface in one position opposite to the second conductive region; a first conductive material 142 that is formed on the front surface of the semiconductor substrate so as to extend on the exposed surface of the second conductive region and on an exposed surface in the opposite position across the first conductive region in a condition insulated from the first conductive region; and a first insulating support 103 that covers the exposed surface of the first conductive region so as to keep an insulating state. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
