发明名称 SEMICONDUCTOR POWER CONVERTER
摘要 <P>PROBLEM TO BE SOLVED: To protect remaining IGBTs from breakage with a simple circuit structure even if either of the IGBTs is broken, in a semiconductor power converter in which a plurality of semiconductor devices are connected in parallel. <P>SOLUTION: This semiconductor power converter includes: a semiconductor power conversion circuit 10 which has the first IGBT 1 having a temperature detecting device 3 and the second IGBT 2 having a current detecting device 4 connected in parallel, and which switches the first and second semiconductor devices 1, 2; an overheat protection circuit 5 for protecting overheat of the first and the second IGBT 1, 2, based on the temperature information obtained by the temperature detecting device 3 of the first IGBT 1; and an overcurrent protecting circuit 6 for protecting the first and second IGBT 1, 2 from overcurrent based on the current information obtained from the current detecting device 4 of the second IGBT 2. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007330043(A) 申请公布日期 2007.12.20
申请号 JP20060159665 申请日期 2006.06.08
申请人 MITSUBISHI ELECTRIC CORP 发明人 OKUDA TATSUYA;MICHINAKA TAKUYA
分类号 H01L21/822;H01L27/04;H02M1/08 主分类号 H01L21/822
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