SEMICONDUCTOR, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device where the driving current of a pMOSFET is increased by an easily formable method using an existing silicon process, and to provide its manufacturing method. SOLUTION: The pMOSFET having a channel in a <100> direction on a (100) silicon substrate 11 is formed on the semiconductor device. Compression stress is impressed from the vertical direction of the channel by STI 16. COPYRIGHT: (C)2008,JPO&INPIT