发明名称 |
Edge gas injection for critical dimension uniformity improvement |
摘要 |
A method of etching a semiconductor substrate with improved critical dimension uniformity comprises supporting a semiconductor substrate on a substrate support in an inductively coupled plasma etch chamber; supplying a first etch gas to a central region over the semiconductor substrate; supplying a second gas comprising at least one silicon containing gas to a peripheral region over the semiconductor substrate surrounding the central region, wherein a concentration of silicon in the second gas is greater than a concentration of silicon in the first etch gas; generating plasma from the first etch gas and second gas; and plasma etching an exposed surface of the semiconductor substrate.
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申请公布号 |
US2007293043(A1) |
申请公布日期 |
2007.12.20 |
申请号 |
US20060455671 |
申请日期 |
2006.06.20 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
SINGH HARMEET;COOPERBERG DAVID;VAHEDI VAHID |
分类号 |
C23F1/00;B44C1/22;H01L21/302 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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