发明名称 |
STRUCTURE AND METHOD FOR FORMING A SHIELDED GATE TRENCH FET WITH THE SHIELD AND GATE ELECTRODES BEING CONNECTED TOGETHER |
摘要 |
A field effect transistor (FET) includes a plurality of trenches extending into a semiconductor region. Each trench includes a gate electrode and a shield electrode with an inter-electrode dielectric therebetween, wherein the shield electrode and the gate electrode are electrically connected together.
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申请公布号 |
US2007290257(A1) |
申请公布日期 |
2007.12.20 |
申请号 |
US20060471279 |
申请日期 |
2006.06.19 |
申请人 |
KRAFT NATHAN;KOCON CHRISTOPHER BOGUSLAW;THORUP PAUL |
发明人 |
KRAFT NATHAN;KOCON CHRISTOPHER BOGUSLAW;THORUP PAUL |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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