发明名称 HIGH FREQUENCY SEMICONDUCTOR DEVICE
摘要 A semiconductor device has a mounting substrate and a semiconductor package mounted on the mounting substrate. The mounting substrate has a substrate body, input/output line conductors on the upper surface of the substrate body, a front-face grounding conductor on the upper surface of the substrate body, spaced from the input/output line conductors, and a lower surface grounding conductor formed on the lower surface of the substrate body and electrically connected to the front-face grounding conductor. The semiconductor package has input/output terminals electrically connected to end portions of the input/output line conductors, a grounding terminal electrically connected to the front-face grounding conductor, and a semiconductor element die-bonded on the grounding terminal and electrically connected to the input/output terminals. The input/output line conductors and the lower surface grounding conductor form micro-strip line conductors; and the front-face grounding conductor surrounds the end portions of the input/output line conductors with arch shapes.
申请公布号 US2007290334(A1) 申请公布日期 2007.12.20
申请号 US20060539884 申请日期 2006.10.10
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 CHOMEI KENICHIRO
分类号 H01L23/34 主分类号 H01L23/34
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